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1

Heterostructure growth of a single-crystal hexagonal AlN (0001) layer on cubic diamond (111) surface

Hirama, Kazuyuki, Taniyasu, Yoshitaka, Kasu, Makoto

Journal:

Journal of Applied Physics

Year:

2010

Language:

english

File:

PDF, 1.31 MB

english, 2010

2

An aluminium nitride light-emitting diode with a wavelength of 210 nanometres

Taniyasu, Yoshitaka, Kasu, Makoto, Makimoto, Toshiki

Journal:

Year:

2006

Language:

english

File:

PDF, 338 KB

english, 2006

3

MOVPE growth of single-crystal hexagonal AlN on cubic diamond

Yoshitaka Taniyasu, Makoto Kasu

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 446 KB

english, 2009

4

Aluminum nitride deep-ultraviolet light-emitting p–n junction diodes

Taniyasu, Yoshitaka, Kasu, Makoto

Journal:

Diamond and Related Materials

Year:

2008

Language:

english

File:

PDF, 879 KB

english, 2008

5

Intentional control of n-type conduction for Si-doped AlN and Al[sub X]Ga[sub 1−X]N (0.42≤x<1)

Taniyasu, Yoshitaka, Kasu, Makoto, Kobayashi, Naoki

Journal:

Applied Physics Letters

Year:

2002

Language:

english

File:

PDF, 237 KB

english, 2002

6

Single-crystal cubic boron nitride thin films grown by ion-beam-assisted molecular beam epitaxy

Hirama, Kazuyuki, Taniyasu, Yoshitaka, Karimoto, Shin-ichi, Krockenberger, Yoshiharu, Yamamoto, Hideki

Journal:

Applied Physics Letters

Year:

2014

Language:

english

File:

PDF, 1.63 MB

english, 2014

7

Increased electron mobility in n-type Si-doped AlN by reducing dislocation density

Taniyasu, Yoshitaka, Kasu, Makoto, Makimoto, Toshiki

Journal:

Applied Physics Letters

Year:

2006

Language:

english

File:

PDF, 504 KB

english, 2006

8

AlGaN/GaN high-electron mobility transistors with low thermal resistance grown on single-crystal diamond (111) substrates by metalorganic vapor-phase epitaxy

Hirama, Kazuyuki, Taniyasu, Yoshitaka, Kasu, Makoto

Journal:

Applied Physics Letters

Year:

2011

Language:

english

File:

PDF, 706 KB

english, 2011

9

Heteroepitaxial growth of single-domain cubic boron nitride films by ion-beam-assisted MBE

Hirama, Kazuyuki, Taniyasu, Yoshitaka, Karimoto, Shin-ichi, Yamamoto, Hideki, Kumakura, Kazuhide

Journal:

Applied Physics Express

Year:

2017

Language:

english

File:

PDF, 5.23 MB

english, 2017

10

Ferromagnetism above 1000 K in a highly cation-ordered double-perovskite insulator Sr3OsO6

Wakabayashi, Yuki K., Krockenberger, Yoshiharu, Tsujimoto, Naoto, Boykin, Tommy, Tsuneyuki, Shinji, Taniyasu, Yoshitaka, Yamamoto, Hideki

Journal:

Nature Communications

Year:

2019

Language:

english

File:

PDF, 1.53 MB

english, 2019

11

Threading dislocations in heteroepitaxial AlN layer grown by MOVPE on SiC (0 0 0 1) substrate

Yoshitaka Taniyasu, Makoto Kasu, Toshiki Makimoto

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 660 KB

english, 2007

12

Spectroscopic ellipsometry study on initial growth stages of GaN films on GaAs(001) in low-pressure MOVPE

Taniyasu, Yoshitaka, Ito, Ryouichi, Shimoyama, Norio, Kurihara, Megumi, Jia, Anwei, Kato, Yoshinori, Kobayashi, Masakazu, Yoshikawa, Akihiko, Takahashi, Kiyoshi

Journal:

Journal of Crystal Growth

Year:

1998

Language:

english

File:

PDF, 151 KB

english, 1998

13

Triode-type basic display structure using Si-doped AlN field emitters

Yoshitaka Taniyasu, Makoto Kasu, Toshiki Makimoto, Naoki Kobayashi

Journal:

physica status solidi (a)

Year:

2003

Language:

english

File:

PDF, 110 KB

english, 2003

14

High electron concentrations in Si-doped AlN/AlGaN superlattices with high average Al content of 80%

Yoshitaka Taniyasu, Makoto Kasu, Kazuhide Kumakura, Toshiki Makimoto, Naoki Kobayashi

Journal:

physica status solidi (a)

Year:

2003

Language:

english

File:

PDF, 113 KB

english, 2003

15

Diamond RF FETs and other approaches to electronics

Makoto Kasu, Kenji Ueda, Hiroyuki Kageshima, Yoshitaka Taniyasu

Journal:

physica status solidi (c)

Year:

2008

Language:

english

File:

PDF, 524 KB

english, 2008

16

In-situ monitoring of surface stoichiometry and growth kinetics study of GaN (0001) in MOVPE by spectroscopic ellipsometry

Yoshitaka Taniyasu, Akihiko Yoshikawa

Journal:

Journal of Electronic Materials

Year:

2001

Language:

english

File:

PDF, 193 KB

english, 2001

17

Electroluminescence and capacitance-voltage characteristics of single-crystal n-type AlN (0001)/p-type diamond (111) heterojunction diodes

Hirama, Kazuyuki, Taniyasu, Yoshitaka, Kasu, Makoto

Journal:

Applied Physics Letters

Year:

2011

Language:

english

File:

PDF, 676 KB

english, 2011

18

Epitaxial Growth of AlGaN/GaN High-Electron Mobility Transistor Structure on Diamond (111) Surface

Hirama, Kazuyuki, Taniyasu, Yoshitaka, Kasu, Makoto

Journal:

Japanese Journal of Applied Physics

Year:

2012

Language:

english

File:

PDF, 778 KB

english, 2012

19

Mg doping for p-type AlInN lattice-matched to GaN

Taniyasu, Yoshitaka, Carlin, Jean-François, Castiglia, Antonino, Butté, Raphaël, Grandjean, Nicolas

Journal:

Applied Physics Letters

Year:

2012

Language:

english

File:

PDF, 1.40 MB

english, 2012

20

Polarization property of deep-ultraviolet light emission from C-plane AlN/GaN short-period superlattices

Taniyasu, Yoshitaka, Kasu, Makoto

Journal:

Applied Physics Letters

Year:

2011

Language:

english

File:

PDF, 948 KB

english, 2011

21

Electrical conduction properties of n-type Si-doped AlN with high electron mobility (>100 cm[sup 2] V[sup −1] s[sup −1])

Taniyasu, Yoshitaka, Kasu, Makoto, Makimoto, Toshiki

Journal:

Applied Physics Letters

Year:

2004

Language:

english

File:

PDF, 305 KB

english, 2004

22

Radiation and polarization properties of free-exciton emission from AlN (0001) surface

Taniyasu, Yoshitaka, Kasu, Makoto, Makimoto, Toshiki

Journal:

Applied Physics Letters

Year:

2007

Language:

english

File:

PDF, 483 KB

english, 2007

23

Deep-ultraviolet light emission properties of nonpolar M-plane AlGaN quantum wells

Banal, Ryan G., Taniyasu, Yoshitaka, Yamamoto, Hideki

Journal:

Applied Physics Letters

Year:

2014

Language:

english

File:

PDF, 876 KB

english, 2014

24

Shallow donor and deep DX-like center in InAlN layers nearly lattice-matched to GaN

Py, Marcel A., Lugani, Lorenzo, Taniyasu, Yoshitaka, Carlin, Jean-François, Grandjean, Nicolas

Journal:

Physical Review B

Year:

2014

Language:

english

File:

PDF, 813 KB

english, 2014

25

Influence of Lattice Constants of GaN and InGaN on npn-Type GaN/InGaN Heterojunction Bipolar Transistors

Makimoto, Toshiki, Kido, Takatoshi, Kumakura, Kazuhide, Taniyasu, Yoshitaka, Kasu, Makoto, Matsumoto, Nobuo

Journal:

Japanese Journal of Applied Physics

Year:

2006

Language:

english

File:

PDF, 109 KB

english, 2006

26

Lattice parameters of wurtzite Al[sub 1−x]Si[sub x]N ternary alloys

Taniyasu, Yoshitaka, Kasu, Makoto, Kobayashi, Naoki

Journal:

Applied Physics Letters

Year:

2001

Language:

english

File:

PDF, 284 KB

english, 2001

27

Field emission properties of heavily Si-doped AlN in triode-type display structure

Taniyasu, Yoshitaka, Kasu, Makoto, Makimoto, Toshiki

Journal:

Applied Physics Letters

Year:

2004

Language:

english

File:

PDF, 301 KB

english, 2004

28

Growth of iron nitride thin films by molecular beam epitaxy

Naito, Michio, Uehara, Koji, Takeda, Rikimaru, Taniyasu, Yoshitaka, Yamamoto, Hideki

Journal:

Journal of Crystal Growth

Year:

2015

Language:

english

File:

PDF, 1.24 MB

english, 2015

29

Formation of Solid Solution of Al1-xSixN (0

Kasu, Makoto, Taniyasu, Yoshitaka, Kobayashi, Naoki

Journal:

Japanese Journal of Applied Physics

Year:

2001

Language:

english

File:

PDF, 3.50 MB

english, 2001

30

Hexagonal AlN(0001) Heteroepitaxial Growth on Cubic Diamond (001)

Hirama, Kazuyuki, Taniyasu, Yoshitaka, Kasu, Makoto

Journal:

Japanese Journal of Applied Physics

Year:

2010

Language:

english

File:

PDF, 3.06 MB

english, 2010

31

Strained Thick p-InGaN Layers for GaN/InGaN Heterojunction Bipolar Transistors on Sapphire Substrates

Makimoto, Toshiki, Yamauchi, Yoshiharu, Kido, Takatoshi, Kumakura, Kazuhide, Taniyasu, Yoshitaka, Kasu, Makoto, Matsumoto, Nobuo

Journal:

Japanese Journal of Applied Physics

Year:

2005

Language:

english

File:

PDF, 117 KB

english, 2005

32

Growth and Device Properties of AlGaN/GaN High-Electron Mobility Transistors on a Diamond Substrate

Hirama, Kazuyuki, Kasu, Makoto, Taniyasu, Yoshitaka

Journal:

Japanese Journal of Applied Physics

Year:

2012

Language:

english

File:

PDF, 997 KB

english, 2012

33

[IEEE 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)] - Toyama, Japan (2016.6.26-2016.6.30)] 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS) - Flow-rate modulation epitaxy of nonpolar m-plane AlN homoepitaxial layers grown on AlN bulk substrates

Nishinaka, Junichi, Taniyasu, Yoshitaka, Akasaka, Tetsuya, Kumakura, Kazuhide

Year:

2016

Language:

english

File:

PDF, 17 KB

english, 2016

34

Surface morphology control of nonpolar m -plane AlN homoepitaxial layers by flow-rate modulation epitaxy

Nishinaka, Junichi, Taniyasu, Yoshitaka, Akasaka, Tetsuya, Kumakura, Kazuhide

Journal:

physica status solidi (b)

Year:

2017

Language:

english

File:

PDF, 2.25 MB

english, 2017

35

Surface morphology control of nonpolar m -plane AlN homoepitaxial layers by flow-rate modulation epitaxy (Phys. Status Solidi B 2/2017)

Nishinaka, Junichi, Taniyasu, Yoshitaka, Akasaka, Tetsuya, Kumakura, Kazuhide

Journal:

physica status solidi (b)

Year:

2017

File:

PDF, 1.02 MB

2017

36

High hole concentration in Mg-doped AlN/AlGaN superlattices with high Al content

Ebata, Kazuaki, Nishinaka, Junichi, Taniyasu, Yoshitaka, Kumakura, Kazuhide

Journal:

Japanese Journal of Applied Physics

Year:

2018

Language:

english

File:

PDF, 843 KB

english, 2018

37

Transistors driven by superconductors

Krockenberger, Yoshiharu, Taniyasu, Yoshitaka

Journal:

Year:

2018

Language:

english

File:

PDF, 299 KB

english, 2018

38

Surface structures of graphene covered Cu(103)

Ogawa, Yui, Murata, Yuya, Suzuki, Satoru, Hibino, Hiroki, Heun, Stefan, Taniyasu, Yoshitaka, Kumakura, Kazuhide

Journal:

Japanese Journal of Applied Physics

Year:

2018

Language:

english

File:

PDF, 854 KB

english, 2018

39

Improved adaptive sampling method utilizing Gaussian process regression for prediction of spectral peak structures

Wakabayashi, Yuki K., Otsuka, Takuma, Taniyasu, Yoshitaka, Yamamoto, Hideki, Sawada, Hiroshi

Journal:

Applied Physics Express

Year:

2018

Language:

english

File:

PDF, 1.09 MB

english, 2018

40

Plasmon Control driven by Spatial Carrier Density Modulation in Graphene

Takamura, Makoto, Kumada, Norio, Wang, Shengnan, Kumakura, Kazuhide, Taniyasu, Yoshitaka

Journal:

Year:

2019

Language:

english

File:

PDF, 2.10 MB

english, 2019

41

Turbostratic Stacking Effect in Multilayer Graphene on the Electrical Transport Properties

Negishi, Ryota, Wei, Chaopeng, Yao, Yao, Ogawa, Yui, Akabori, Masashi, Kanai, Yasushi, Matsumoto, Kazuhiko, Taniyasu, Yoshitaka, Kobayashi, Yoshihiro

Journal:

physica status solidi (b)

Year:

2020

File:

PDF, 562 KB

2020

42

Quantum transport evidence of Weyl fermions in an epitaxial ferromagnetic oxide

Takiguchi, Kosuke, Wakabayashi, Yuki K., Irie, Hiroshi, Krockenberger, Yoshiharu, Otsuka, Takuma, Sawada, Hiroshi, Nikolaev, Sergey A., Das, Hena, Tanaka, Masaaki, Taniyasu, Yoshitaka, Yamamoto, Hidek

Journal:

Nature Communications

Year:

2020

File:

PDF, 1.68 MB

2020

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